Piezoelectricity in asymmetrically strained bilayer graphene

• Published in: 2d materials Vol. 3; no. 3; p. 35015
• Main Authors: Van der Donck, M, De Beule, C, Partoens, B, Peeters, F M, Van Duppen, B
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.09.2016
• Subjects: Asymmetry; band structure; bilayer graphene; Coupling; Graphene; Interlayers; Multilayers; Piezoelectricity; Stresses; Superstructures
• ISSN: 2053-1583; 2053-1583
• DOI: 10.1088/2053-1583/3/3/035015

We study the electronic properties of commensurate faulted bilayer graphene by diagonalizing the one-particle Hamiltonian of the bilayer system in a complete basis of Bloch states of the individual graphene layers. Our novel approach is very general and can be easily extended to any commensurate graphene-based heterostructure. Here, we consider three cases: (i) twisted bilayer graphene, (ii) bilayer graphene where triaxial stress is applied to one layer and (iii) bilayer graphene where uniaxial stress is applied to one layer. We show that the resulting superstructures can be divided into distinct classes, depending on the twist angle or the magnitude of the induced strain. The different classes are distinguished from each other by the interlayer coupling mechanism, resulting in fundamentally different low-energy physics. For the cases of triaxial and uniaxial stress, the individual graphene layers tend to decouple and we find significant charge transfer between the layers. In addition, this piezoelectric effect can be tuned by applying a perpendicular electric field. Finally, we show how our approach can be generalized to multilayer systems.