SiGe quantum wells implementation in Si based nanowires for solar cells applications

This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a...

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Bibliographic Details
Published inDigest Journal of Nanomaterials and Biostructures Vol. 18; no. 1; pp. 327 - 342
Main Authors Safi, M., Aissat, A., Guesmi, H., Vilcot, J. P.
Format Journal Article
LanguageEnglish
Published Forum of Chalcogeniders 01.01.2023
Subjects
Engineering Sciences
Micro and nanotechnologies
Microelectronics
Optics
Photonic
Solar cells
Nanowire
Quantum efficiency
Quantum wells
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Summary:This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.
ISSN:1842-3582
1842-3582
DOI:10.15251/DJNB.2023.181.327