Single Events Induced By Heavy Ions and Laser Pulses in Silicon Schottky Diodes

• Published in: IEEE transactions on nuclear science Vol. 65; no. 8; pp. 1768 - 1775
• Main Authors: Mauguet, M., Lagarde, D., Widmer, F., Chatry, N., Marie, X., Lorfevre, E., Bezerra, F., Marec, R., Calvel, P.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.08.2018; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Diodes; Electric fields; Electrons; Heavy ions; Ions; laser pulses; Lasers; Measurement by laser beam; Parameters; Pulsed lasers; Schottky diode; Schottky diodes; Semiconductor lasers; Sensitivity; Silicon; single-event burnout (SEB); transient; trench structure
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2018.2813096

This paper is dedicated to the investigation of single-event effects (SEEs) in different types of silicon Schottky diodes using heavy ions and laser pulses. The objectives are both to progress in heavy ions and laser correlations using simple devices and to further understand the impact of optical and electrical parameters on photogeneration in Schottky diodes to contribute to the use of pulsed lasers for single-event sensitivity studies. Heavy ion test results on planar and trenched commercial Schottky diodes are presented. Based on these results, pulsed laser tests and transient measurements were performed on the sensitive devices. Destructive single events were evidenced with both techniques. Significant parameters of the laser tests, such as backside aperture of the device, electrical and optical configuration are discussed. These investigations show the potential of laser testing for Schottky diode SEE sensitivity study.