Dose Rate Switching Technique on ELDRS-Free Bipolar Devices

The Switched Dose Rate technique is investigated when devices do not exhibit ELDRS. Experimental data and modeling results are presented and discussed in terms of hardness assurance. It is shown, for devices that do not show ELDRS, that a time is required before the switched devices reach the LDR cu...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 63; no. 4; pp. 2065 - 2071
Main Authors Boch, J., Michez, A., Rousselet, M., Dhombres, S., Touboul, A. D., Vaille, J-R, Dusseau, L., Lorfevre, E., Chatry, N., Sukhaseum, N., Saigne, F.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Institute of Electrical and Electronics Engineers
Subjects
Bipolar junction transistor
Degradation
dose rate
ELDRS
Electron traps
Electronics
Engineering Sciences
Optical switches
Radiation effects
Spontaneous emission
switching experiment
total dose
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Summary:The Switched Dose Rate technique is investigated when devices do not exhibit ELDRS. Experimental data and modeling results are presented and discussed in terms of hardness assurance. It is shown, for devices that do not show ELDRS, that a time is required before the switched devices reach the LDR curve. As a solution, it is proposed to apply an annealing between the HDR and the LDR irradiation.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2015.2512620