Effects of Electrical Characteristics on the Non-Rectangular Gate Structure Variations for the Multifinger MOSFETs

• Published in: IEEE transactions on components, packaging, and manufacturing technology (2011) Vol. 1; no. 3; pp. 352 - 358
• Main Authors: PARK, Chulhyun, SONG, Youngkyu, KANG, Jung Han, JUNG, Seong-Ook, YUN, Ilgu
• Format: Journal Article
• Language: English
• Published: Piscataway, NJ IEEE 01.03.2011; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Characteristic fluctuation; Data models; Electronics; Exact sciences and technology; Integrated circuit modeling; large-signal modeling; Leakage current; Logic gates; Mathematical model; multifinger MOSFET; non-rectangular gate; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Studies; Testing, measurement, noise and reliability; Threshold voltage; Transistors; Voltage threshold; multifinger MOSFET; MOSFET; Characteristic fluctuation; non-rectangular gate; Large signal behavior; Testing equipment; Leakage current; large-signal modeling; Modeling; Electrical characteristic
• ISSN: 2156-3950; 2156-3985
• DOI: 10.1109/TCPMT.2010.2099532

In this paper, modeling methodology of electrical characteristics for non-rectangular gate structured multifinger metal-oxide-semiconductor field-effect transistors based on minimum channel length is proposed. The test structures are fabricated and the parasitic model parameters are extracted using the measured data for the proposed model. The proposed model can support better physical explanation than the previously presented integrated length model. The proposed model can precisely explain the electrical characteristics and is supported by theoretical equations for non-rectangular gates, such as the threshold voltage, the saturation voltage, the saturation current, and the leakage current. However, the previous integrated length model cannot sufficiently explain the electrical characteristics for non-rectangular gates although it is sustained by theoretical equations. Furthermore, this paper shows the relationship between gate poly area and the electrical characteristics. As a result, the electrical characteristics are dependent on the variation of the minimum of the gate length, rather than the profile of gate length variation.