Integrated TRAPATT Diode Arrays (Short Papers)

This short paper is a description of the technique used to monolithically interconnect TRAPATT diodes in an array--resulting in a diode having low inductance interconnection and integrated heat capacitance which is necessary for long pulsewidths. For given power dissipation density and pulse length,...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 23; no. 10; pp. 841 - 843
Main Authors Rosen, A., Kawamoto, H., Klatskin, J., Allen, E.L.
Format Journal Article
LanguageEnglish
Published IEEE 01.10.1975
Subjects
Bridge circuits
Copper
Inductance
Integrated circuit interconnections
Lead
Metallization
Pulse amplifiers
Resists
Semiconductor diodes
Temperature
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Summary:This short paper is a description of the technique used to monolithically interconnect TRAPATT diodes in an array--resulting in a diode having low inductance interconnection and integrated heat capacitance which is necessary for long pulsewidths. For given power dissipation density and pulse length, the transient temperature rise in the diode decreases with the diameter. The reduction in diode diameter, however, leads to reduced power output. To take advantage of the reduction in temperature rise of small-size diodes while maintaining a large power output, a multiple-diode structure, monolithically interconnected, was fabricated. Pulsewidth operation of 50 mu s has been achieved at a dissipation power density as high as 200 kW/cm/sup 2/, whereas the dissipation density must be reduced to 100 kW/cm/sup 2/ for the same total-area single-disk diode to operate reliably at 50 mu s.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1975.1128696