APA (7th ed.) Citation

Schlosser, M., Bhuwalka, K., Sauter, M., Zilbauer, T., Sulima, T., & Eisele, I. (2009). Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- \kappa Gate Dielectrics. IEEE transactions on electron devices, 56(1), 100-108. https://doi.org/10.1109/TED.2008.2008375

Chicago Style (17th ed.) Citation

Schlosser, M., K.K Bhuwalka, M. Sauter, T. Zilbauer, T. Sulima, and I. Eisele. "Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- \kappa Gate Dielectrics." IEEE Transactions on Electron Devices 56, no. 1 (2009): 100-108. https://doi.org/10.1109/TED.2008.2008375.

MLA (9th ed.) Citation

Schlosser, M., et al. "Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- \kappa Gate Dielectrics." IEEE Transactions on Electron Devices, vol. 56, no. 1, 2009, pp. 100-108, https://doi.org/10.1109/TED.2008.2008375.