Effect of successive plasma shots on the dielectric constant of the CdS:Mn thin films exposed to the helium electron beam of plasma focus device

• Published in: Sensors and actuators. A. Physical. Vol. 329; p. 112819
• Main Authors: Diab, F., Ali, I.A., Hassan, A.M.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.10.2021; Elsevier BV
• Subjects: Alternating current; Cadmium sulphide; Charging; Dielectric properties; Dielectrics; Discharge; Electric potential; Electrical resistivity; Electron beam; Electron beams; Electrons; Emission analysis; Evaporation; Focus devices; Gas pressure; Glass substrates; Helium; High vacuum; Mathematical analysis; Parameters; Permittivity; Plasma; Plasma focus; Plasma focus device; Pressure; Room temperature; Thin films; Voltage; Plasma focus device; Electron beam; Dielectric properties; Cadmium sulphide
• ISSN: 0924-4247; 1873-3069
• DOI: 10.1016/j.sna.2021.112819

[Display omitted] •Helium was used as a filling gas with optimum pressure of 1.1 Torr.•The effects of the voltage, working gas pressure, and parameters of the electron beam applied were calculated.•The maximum discharge current was 92kA, and the maximum discharge voltage was 2.7 kV, the Faraday cup was used to estimate the energy of the electron beam and calculate the beam current at the side-on location.•CdS1-xMnx (0 ≤ × ≤ 0.1) thin films were successfully deposited on glass substrates.•The AC electrical conductivity of the (CdS) and (CdS:Mn) were measured. This paper investigated the emission of plasma concerning electron beam in a low energy Plasma Focus Device. Helium is utilized as a working gas with a pressure of 1.1 Torr. The effects of the voltage, working gas pressure, and parameters of the beam of electron applied were calculated. At the charging voltage of 12 kV, the maximum discharge current is 92kA, the maximum discharge voltage is 2.7 kV, the maximum dI/dt is -37 in.(A.U) and the maximum PMT signal is -4 in.(A.U). To estimate the electron beam energy and calculate the beam current at the side-on location, the Faraday cup was used. Using the electron beam evaporation method with coating unit from Edward 306 Auto under high vacuum conditions at room temperature, CdS1-xMnx (0 ≤ x ≤ 0.1) thin films were successfully deposited on glass substrates. The AC electrical conductivity of the (CdS) and (CdS doped with Mn) are measured. The dielectric constant of the (CdS doped with Mn) reveals that the conduction depends on the frequency. The Ac conductivity (σac) was obtained from the values of ε'. The experimental work and parameters ε' and σac at room temperature were studied as a function of frequency in the range of 100 Hz to 5 MHz. Mechanical studies of the CdS doped with Mn are investigated at different Mn concentrations and different charging voltage.