Effect of RF Sputtering Power on the Electrical Properties of Si–In–Zn–O Thin Film Transistors

• Published in: Transactions on electrical and electronic materials Vol. 20; no. 6; pp. 518 - 521
• Main Authors: Byun, Jae Min, Lee, Sang Yeol
• Format: Journal Article
• Language: English
• Published: Seoul The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 01.12.2019; 한국전기전자재료학회
• Subjects: Chemistry and Materials Science; Electronics and Microelectronics; Instrumentation; Materials Science; Optical and Electronic Materials; Regular Paper; 전기공학; RF power dependency; Depletion load type inverter; Amorphous oxide semiconductor; Thin film transistor; SiInZnO
• ISSN: 1229-7607; 2092-7592
• DOI: 10.1007/s42341-019-00142-6

The electrical characteristics of the amorphous silicon–indium–zinc–oxide (a-SIZO) thin film transistors (TFTs) has been investigated depending on the RF magnetron sputtering power. As increasing the radio frequency sputtering power from 20 to 40 W, the electrical characteristics showed the change of threshold voltage (V th ) to negative direction from 2 to −2.61 V due to the increase of oxygen vacancy (V O ). Based on the shift of V th controlled by sputtering power, inverter was fabricated with the TFTs fabricated at sputtering power of 20 W and 30 W as enhancement mode and 40 W as depletion mode. The voltage transfer curve showed inversion clearly, and the voltage gain showed 1 V/V and 1.65 V/V, respectively. These results reveal that it is possible to apply to integrated circuits or the next generation memory devices simply by controlling processing conditions.