Investigation of Human-Body-Model and Machine-Model ESD Robustness on Stacked Low-Voltage Field-Oxide Devices for High-Voltage Applications
Electrostatic discharge (ESD) robustness of lowvoltage (LV) field-oxide devices in stacked configuration for highvoltage (HV) applications was investigated in a 0.5-μm HV silicon on insulator (SOI) process. Stacked LV field-oxide devices with different stacking numbers have been verified in a silico...
Saved in:
Published in | IEEE transactions on electron devices Vol. 63; no. 8; pp. 3193 - 3198 |
---|---|
Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.08.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!