Tuning broadband microwave absorption via highly conductive Fe3O4/graphene heterostructural nanofillers

•Direct exfoliated graphene was used for directly growing Fe3O4 nanoparticles.•Highly conductive Fe3O4/graphene heterostructures were synthesized.•Fe3O4/graphene interfaces are responsible for dielectric response.•Tunable effective absorption bandwidth was achieved over 4–18GHz. Graphene oxides (GO)...

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Published inMaterials research bulletin Vol. 72; pp. 316 - 323
Main Authors Song, Wei-Li, Guan, Xiao-Tian, Fan, Li-Zhen, Cao, Wen-Qiang, Zhao, Quan-Liang, Wang, Chan-Yuan, Cao, Mao-Sheng
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.12.2015
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Summary:•Direct exfoliated graphene was used for directly growing Fe3O4 nanoparticles.•Highly conductive Fe3O4/graphene heterostructures were synthesized.•Fe3O4/graphene interfaces are responsible for dielectric response.•Tunable effective absorption bandwidth was achieved over 4–18GHz. Graphene oxides (GO) have been widely utilized for preparing conductive heterostructures via converting insulating GO back to conductive reduced GO (RGO). Such conversion may substantially impact the results if the introduced heterostructures are sensitive to the conversion processes. To avoid the concerns, herein a novel Fe3O4/graphene (Fe3O4/GN) heterostructure of high electrical conductivity have been prepared by directly using highly conductive GN without any reducing agent or post-treatment. Results of the electrical properties, magnetic properties, complex permittivity and permeability suggest that the Fe3O4/GN interfaces are responsible for the influence of the corresponding properties. The intrinsically conductive features coupled with the Fe3O4/GN interfaces allow the heterostructures to possess sufficient microwave absorption at relatively low filler loading, with tunable effective absorption bandwidth observed over 4–18GHz. Fundamental mechanisms indicate the advantages of the simple strategies and resulting heterostructures promise a great arena for advanced graphene heterostructures that are not achievable upon RGO.
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2015.07.028