Active-edge FBK-INFN-LPNHE thin n-on-p pixel sensors for the upgrade of the ATLAS Inner Tracker

In view of the LHC upgrade for the High Luminosity phase (HL-LHC), the ATLAS experiment plans to replace the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost...

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Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 936; pp. 638 - 639
Main Authors Calderini, G., Bomben, M., D’ Eramo, L., Ducourthial, A., Luise, I., Marchiori, G., Boscardin, G., Ronchin, S., Zorzi, N., Bosisio, L., Dalla Betta, G.F., Darbo, G., Giacomini, G., Meschini, M., Messineo, A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 21.08.2019
Subjects
Active edge
Planar pixels
Silicon detectors
Tracking detectors
Silicon detectors
Tracking detectors
Planar pixels
Active edge
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Summary:In view of the LHC upgrade for the High Luminosity phase (HL-LHC), the ATLAS experiment plans to replace the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of thin 100 and 130μm n-in-p planar pixel sensors produced by FBK-CMM with active-edge technology in collaboration with LPNHE and INFN. Beam-test results are presented, with focus on the hit efficiency at the detector edge of a novel design consisting of a staggered deep trench.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2018.10.035