Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating

The temperature field in the vertical metalorganic chemical vapor deposition （MOCVD） reactor chamber used for the growth of GaN materials is studied using the finite element analysis method （FEM）. The effects of the relative position between the coils and the middle section of the susceptor, the rad...

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Published inJournal of semiconductors Vol. 30; no. 11; pp. 26 - 30
Main Author 李志明 许晟瑞 张进成 常永明 倪金玉 周小伟 郝跃
Format Journal Article
LanguageChinese
English
Published IOP Publishing 01.11.2009
Subjects
MOCVD
反应堆
垂直
感应加热
有限元分析法
温度场
金属有机化学气相沉积
金属有机物化学气相沉积
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Summary:The temperature field in the vertical metalorganic chemical vapor deposition （MOCVD） reactor chamber used for the growth of GaN materials is studied using the finite element analysis method （FEM）. The effects of the relative position between the coils and the middle section of the susceptor, the radius of the coil, and the height of the susceptor on heating condition are analyzed. All simulation results indicate that the highest heating efficiency can be obtained under the conditions that the coil distributes symmetrically in the middle section of the susceptor and the ratio of the height of the susceptor to that of the coil is three-quarters. Furthermore, the heating efficiency is inversely proportional to the radius of the coil.
Bibliography:MOCVD; finite element; temperature; suspector
TL631.24
finite element
temperature
suspector
11-5781/TN
MOCVD
TN304.23
ISSN:1674-4926
DOI:10.1088/1674-4926/30/11/113004