High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process

• Published in: IEEE electron device letters Vol. 37; no. 1; pp. 8 - 11
• Main Authors: Hsu, Chung-Chun, Tsai, Yi-He, Chen, Che-Wei, Li, Jyun-Han, Lin, Yu-Hsien, Lee, Yao-Jen, Luo, Guang-Li, Chien, Chao-Hsin
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.01.2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Annealing; Channels; Contact; Drains; Electric potential; Germanium; Junctions; Metals; Microwave-activated annealing (MWA); MOSFET; MOSFET circuits; NiSiGe; PMOSFET; quantum well (QW); Quantum wells; Schottky barrier height; Schottky barriers; Silicon; Voltage; PMOSFET; quantum well (QW); Schottky barrier height; Microwave-activated annealing (MWA); NiSiGe
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2015.2501841

We present a high-performance Si/Ge/Si p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET) with a NiSiGe Schottky junction source/drain (S/D) formed through microwave-activated annealing. A Schottky contact S/D is preferable, because the lower process temperature is beneficial for eliminating Ge diffusion. The fabricated NiSiGe Schottky junction exhibited a high effective barrier height (Φ Bn ) of 0.69 eV for electrons, resulting in a high junction current ratio of more than 10 5 at the applied voltage of |Va| = 1 V. Our quantum-well pMOSFET exhibited a high I ON /I OFF ratio of ~10 7 (I S ) and a moderate subthreshold swing of 166 mV/decade.