Field Oxide n-channel MOS Dosimeters Fabricated in CMOS Processes

This paper presents a new technique to build MOS dosimeters using unmodified standard CMOS processes. The devices are n-channel MOS transistors built with the regular Field Oxide as a thick radiation-sensitive gate. The devices were fabricated in two different commercial 0.6 μm CMOS processes, gate...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 60; no. 6; pp. 4683 - 4691
Main Authors Lipovetzky, J., Garcia-Inza, M. A., Carbonetto, S., Carra, M. J., Redin, E., Sambuco Salomone, L., Faigon, A.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2013
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bias
Charge carrier processes
CMOS
CMOS process
Devices
Dosimeters
Dosimetry
Electric fields
Gates
Metal oxide semiconductors
MOS devices
Oxides
Radiation effects
solid- state detectors
Transaction processing
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Summary:This paper presents a new technique to build MOS dosimeters using unmodified standard CMOS processes. The devices are n-channel MOS transistors built with the regular Field Oxide as a thick radiation-sensitive gate. The devices were fabricated in two different commercial 0.6 μm CMOS processes, gate oxide thicknesses of ~600 nm and ~400 nm. Responsivities up to 4.4 mV/rad with positive bias, and 1.7 mV/rad with zero gate bias were obtained in the thicker oxides. The effect of charge trapped in the oxide and interface states on the shift in the threshold voltage are analyzed.
Bibliography:ObjectType-Article-1
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ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2013.2287256