Probing the mechanisms of growth of gallium arsenide by metalorganic vapor phase epitaxy using experimental and theoretical studies of designed precursors
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Published in | Journal of electronic materials Vol. 23; no. 2; pp. 69 - 74 |
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Main Authors | , , |
Format | Conference Proceeding Journal Article |
Language | English |
Published |
New York, NY
Institute of Electrical and Electronics Engineers
01.02.1994
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Subjects | |
Online Access | Get full text |
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ISSN: | 0361-5235 1543-186X |
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DOI: | 10.1007/bf02655248 |