Transistor Laser With 13.5-Gb/s Error-Free Data Transmission
A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20°C is determined to be I TH = 36 mA at V CE = 1.5 V from measured transistor laser collector current-voltage (I C -V CE ) and optical power-voltage (L-V CE ) characteristics. T...
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Published in | IEEE photonics technology letters Vol. 26; no. 15; pp. 1542 - 1545 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.08.2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20°C is determined to be I TH = 36 mA at V CE = 1.5 V from measured transistor laser collector current-voltage (I C -V CE ) and optical power-voltage (L-V CE ) characteristics. The transistor laser is measured to have a modulation bandwidth f -3dB = 8.1 GHz for I B = 75 mA (I B /I TH ~ 2) with a carrier-photon resonance amplitude (~4.2 dB). At the same bias conditions, the transistor laser demonstrates error-free 13.5-Gb/s data transmission at room temperature. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2014.2328666 |