Transistor Laser With 13.5-Gb/s Error-Free Data Transmission

A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20°C is determined to be I TH = 36 mA at V CE = 1.5 V from measured transistor laser collector current-voltage (I C -V CE ) and optical power-voltage (L-V CE ) characteristics. T...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 26; no. 15; pp. 1542 - 1545
Main Authors Tan, Fei, Bambery, Rohan, Feng, Milton, Holonyak, Nick
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Adaptive optics
Data transmission
High-speed optical techniques
Holes
Lasers
Masers
Measurement by laser beam
Modulation
Noise levels
Optical fibers
Semiconductor devices
Threshold currents
Transistors
Transistor laser
bit error ratio
error-free data transmission
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Summary:A quantum well transistor laser with a cavity length of L = 200 μm has been designed and fabricated. Threshold current at 20°C is determined to be I TH = 36 mA at V CE = 1.5 V from measured transistor laser collector current-voltage (I C -V CE ) and optical power-voltage (L-V CE ) characteristics. The transistor laser is measured to have a modulation bandwidth f -3dB = 8.1 GHz for I B = 75 mA (I B /I TH ~ 2) with a carrier-photon resonance amplitude (~4.2 dB). At the same bias conditions, the transistor laser demonstrates error-free 13.5-Gb/s data transmission at room temperature.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2014.2328666