Simulation of High-Efficiency GaN/InGaN p-i-n Solar Cell With Suppressed Polarization and Barrier Effects

The photovoltaic characteristics of Ga-face GaN/InGaN p-i-n solar cells are investigated numerically. The severe polarization and barrier effects induced by the GaN/InGaN hetero-interfaces are demonstrated to be detrimental for the carrier collection. The conversion efficiency could be degraded to b...

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Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 49; no. 1; pp. 17 - 23
Main Authors Chang, Jih-Yuan, Yen, Shih-Hsun, Chang, Yi-An, Kuo, Yen-Kuang
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2013
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Barriers
Conversion
Electric fields
Gallium nitride
Gallium nitrides
Indium
Indium gallium nitrides
Mathematical model
Nitrogen compounds
Photonic band gap
Photovoltaic cells
PIN photodiodes
Polarization
Solar cells
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Summary:The photovoltaic characteristics of Ga-face GaN/InGaN p-i-n solar cells are investigated numerically. The severe polarization and barrier effects induced by the GaN/InGaN hetero-interfaces are demonstrated to be detrimental for the carrier collection. The conversion efficiency could be degraded to be out of application when the degree of polarization and/or indium composition are high. To efficiently eliminate both critical issues, the solar cell structure with appropriate band engineering is introduced. In the proposed structure, the photovoltaic characteristics not only show high-grade performance but also become insensitive to the degree of polarization, even in the situation of high indium composition.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2012.2225601