Performance analysis by simulation of floating-gate MOSFETs applied on a bidirectional associative memory architecture

• Published in: International journal of electronics Vol. 88; no. 2; pp. 159 - 173
• Main Authors: Reyes-Barranca, M. A., Moreno-Cadenas, J. A., GÓmez CastaÑeda, F.
• Format: Journal Article
• Language: English
• Published: London Taylor & Francis Group 01.02.2001; Taylor & Francis
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; Associative memory; MOSFET; Correlation matrix; SPICE; Performance analysis; Neural network; Electrical characteristic; Floating gate MOS transistor
• ISSN: 0020-7217; 1362-3060
• DOI: 10.1080/00207210010002069

Floating-gate MOSFETs (FGMOSFETs) are devices that can be electrically programmable and have a non-volatile characteristic. This feature can be adopted to configure a basic cell performing as a variable resistance that can be applied in artificial neural networks as a synapse. Based on a simple model and considering the coupling coefficient of the structure as the gain of a voltage controlled voltage source, the electrical characteristics of a floating-gate MOSFET can be simulated in PSpice and an artificial neural net, such as the bidirectional associative memory (BAM), can be implemented. Therefore a performance analysis of the net may be done with different sets of threshold voltages for the FGMOSFETs configured as a CMOS inverter used as a synapse. The objective is to know pattern pairs in a bidirectional way. The result is a correlation matrix for the BAM as a function of an electrical parameter of the devices, which is directly related to the respective matrix calculated by the matrix dot product, using the method outlined by Kosko.