Self-aligned indium–gallium–zinc oxide thin-film transistors with SiNx/SiO2/SiNx/SiO2 passivation layers

• Published in: Thin solid films Vol. 564; pp. 397 - 400
• Main Authors: Chen, Rongsheng, Zhou, Wei, Zhang, Meng, Kwok, Hoi-Sing
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.08.2014; Elsevier
• Subjects: Amorphous indium–gallium–zinc oxide; Applied sciences; Electronics; Exact sciences and technology; Oxides; Passivation; Self-aligned structure; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon dioxide; Swing; Thin film transistors; Threshold voltage; Transistors; Thin-film transistors; Amorphous indium–gallium–zinc oxide; Self-aligned structure; Voltage threshold; Gallium oxide; Indium oxide; Amorphous indium-gallium-zinc oxide; Scaling law; Stress effects; Zinc oxide; Thin film transistor; Electric field effect; Reliability; Flat panel displays; Gates
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2014.05.061

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with SiNx/SiO2/SiNx/SiO2 passivation layers are developed in this paper. The resulting a-IGZO TFT exhibits high reliability against bias stress and good electrical performance including field-effect mobility of 5cm2/Vs, threshold voltage of 2.5V, subthreshold swing of 0.63V/decade, and on/off current ratio of 5×106. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. The proposed a-IGZO TFTs in this paper can act as driving devices in the next generation flat panel displays. •Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed.•SiNx/SiO2/SiNx/SiO2 passivation layers are developed.•The source/drain areas are hydrogen-doped by CHF3 plasma.•The devices show good electrical performance and high reliability against bias stress.