Negative differential resistance and resistance switching behaviors in BaTiO3 thin films

The polycrystalline BaTiO3 (BTO) thin films were grown on F-doped SnO2 substrates by pulsed laser deposition. The devices show a rectification at a small voltage, while bipolar resistive switching (RS) and negative differential resistance (NDR) appear at a large voltage. Furthermore, RS remains and...

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Bibliographic Details
Published inJournal of applied physics Vol. 115; no. 20
Main Authors Yang, G., Jia, C. H., Chen, Y. H., Chen, X., Zhang, W. F.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 28.05.2014
Subjects
Applied physics
Barium titanates
Bias
Electric potential
Pulsed laser deposition
Pulsed lasers
Substrates
Switching
Thin films
Tin dioxide
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Summary:The polycrystalline BaTiO3 (BTO) thin films were grown on F-doped SnO2 substrates by pulsed laser deposition. The devices show a rectification at a small voltage, while bipolar resistive switching (RS) and negative differential resistance (NDR) appear at a large voltage. Furthermore, RS remains and NDR disappears when no positive bias is applied, while both RS and NDR behaviors improve when increasing the positive bias. The electrons trapped/detrapped by interface states at Au/BTO interface are proposed to understand the above behaviors.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4878236