A Scalable 0.128-1 Tb/s, 0.8-2.6 pJ/bit, 64-Lane Parallel I/O in 32-nm CMOS
A scalable 64-lane chip-to-chip I/O, with per-lane data rate of 2-16 Gb/s is demonstrated in 32-nm low-power CMOS technology. At maximum aggregate bandwidth of 1.024 Tb/s across 50-cm channel length, the link consumes 2.7 W from a 1.08-V supply, corresponding to 2.6 pJ/bit. As bandwidth demand decre...
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Published in | IEEE journal of solid-state circuits Vol. 48; no. 12; pp. 3229 - 3242 |
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Main Authors | , , , , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
New York, NY
IEEE
01.12.2013
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | A scalable 64-lane chip-to-chip I/O, with per-lane data rate of 2-16 Gb/s is demonstrated in 32-nm low-power CMOS technology. At maximum aggregate bandwidth of 1.024 Tb/s across 50-cm channel length, the link consumes 2.7 W from a 1.08-V supply, corresponding to 2.6 pJ/bit. As bandwidth demand decreases, scaling the per-lane data rate to 4 Gb/s and power supply to 0.65 V provides 1/4 of the maximum bandwidth while consuming 0.2 W. Across a 1-m channel, the link operates at a maximum per-lane data rate of 16 Gb/s; thus, providing up to 1.024 Tb/s of aggregate bandwidth with 3.2 pJ/bit power efficiency from a 1.15-V supply. A length-matched dense interconnect topology allows clocking to be shared across multiple lanes to reduce area and power. Reconfigurable current/voltage mode transmitter driver and CMOS clocking enable a highly scalable power-efficient link. Optional low-dropout regulators provide >22-dB supply noise rejection at the package resonance frequency of 200 MHz. System-level optimization of duty-cycle and quadrature error correctors across the clock hierarchy provides optimized clock phase placement and, thus, enhances link performance and power. A lane failover mechanism provides design robustness to mitigate channel or circuit defects. The active circuitry occupies 1.3 mm 2 . |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2013.2279052 |