Origin of the high-temperature ferromagnetism in Co-doped PbPdO2 semiconductors: A theoretical and experimental study

• Published in: Journal of applied physics Vol. 130; no. 5
• Main Authors: Yang, Yanmin, Zhang, Jian-Min, Jia, Hai, Zhong, Kehua, Xu, Guigui, Huang, Zhigao
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 07.08.2021
• Subjects: Antiferromagnetism; Applied physics; Coupling (molecular); Ferromagnetism; First principles; Ground state; High temperature; Magnetic semiconductors; Magnetism; Monte Carlo simulation; Semiconductors
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/5.0057491

High-temperature ferromagnetism has always been a classic and interesting subject, especially in spin gapless semiconductor PbPdO 2 with exotic properties. Here, a combination of theoretical and experimental studies was employed to clarify the origin of high Tc. First, based on first-principles calculations, electronic band structures of PbPd 0.875Co 0.125O 2 at different Co substitution positions were studied. Our results indicate that Co atoms tend to form an antiferromagnetic ground state due to the Co–O–Co (180 °) indirect exchange effect, while ferromagnetism is favored in Co-doped PbPdO 2 when a unique molecular field effect induced band crossover and p– d coupling occurs. It is revealed that metallic or semiconductor properties have an important connection with ferromagnetism or antiferromagnetism. Subsequently, a Monte Carlo simulation was carried out based on the first-principles results to predict the ferromagnetism of PbPd 0.875Co 0.125O 2. Finally, the moment-magnetic field and moment-temperature curves were also measured for PbPd 0.875Co 0.125O 2 samples, which was found well consistent with the theoretical findings. The ground state of PbPd 0.875Co 0.125O 2 was confirmed to be ferromagnetic. Our results well explain the origin of high-temperature ferromagnetism in diluted magnetic semiconductors and provide new approaches for the design of future high Tc spintronic devices.