Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS

The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not...

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Published inChinese physics letters Vol. 32; no. 12; pp. 160 - 162
Main Author 孙顶 葛阳 许盛之 张力 李宝璋 王广才 魏长春 赵颖 张晓丹
Format Journal Article
LanguageEnglish
Published 01.12.2015
Subjects
SNS
开路电压
有毒气体
硫化
蒸发工艺
薄膜太阳能电池
薄膜表面
连续蒸发
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Summary:The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.
Bibliography:11-1959/O4
The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 （CZTSe） thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn（S, Se）4 （CZTSSe） thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.
SUN Ding, GE Yang, XU Sheng-Zhi, ZHANG Li, LI Bao-Zhang, WANG Guang-Cai, WEI Chang-Chun, ZHAO Ying, ZHANG Xiao-Dan（Institute of Photo Electronics Thin Film Devices and Technology, and Key Laboratory of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071）
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/12/128401