Hot Spot Formation in Microwave Plasma CVD Diamond Synthesis

Plasma-substrate interactions in diamond synthesis via microwave plasma-assisted chemical vapor deposition (CVD) are an important issue in CVD reactor optimization. The hot spot formation observed during single-crystal diamond synthesis in 2.45-GHz cylindrical cavity reactors is examined after long-...

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Published inIEEE transactions on plasma science Vol. 39; no. 11; pp. 2790 - 2791
Main Authors Hemawan, K. W., Yan, C. S., Qi Liang, Lai, J., Yufei Meng, Krasnicki, S., Mao, H. K., Hemley, R. J.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.11.2011
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Chemical reactors
Chemical synthesis
Chemical vapor deposition
Chemical vapor deposition (CVD) diamond
Deposition
Diamond-like carbon
Electromagnetic heating
Holes
hot spot
Hot spots
Inductors
Microwave imaging
microwave plasma
Microwave theory and techniques
Microwaves
Optimization
Plasma physics
Plasmas
Reactors
Single crystals
Substrates
Synthesis
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Summary:Plasma-substrate interactions in diamond synthesis via microwave plasma-assisted chemical vapor deposition (CVD) are an important issue in CVD reactor optimization. The hot spot formation observed during single-crystal diamond synthesis in 2.45-GHz cylindrical cavity reactors is examined after long-run deposition.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0093-3813
1939-9375
DOI:10.1109/TPS.2011.2157531