Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Traps are characterized in AlGaN–GaN HEMTs by means of DLTS techniques and the associated charge/discharge behavior is interpreted with the aid of numerical device simulations. Under specific bias conditions, buffer traps can produce “false” surface-trap signals, i.e. the same type of current-mode D...

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Published inMicroelectronics and reliability Vol. 47; no. 9; pp. 1639 - 1642
Main Authors Faqir, M., Verzellesi, G., Fantini, F., Danesin, F., Rampazzo, F., Meneghesso, G., Zanoni, E., Cavallini, A., Castaldini, A., Labat, N., Touboul, A., Dua, C.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Oxford Elsevier Ltd 01.09.2007
Elsevier
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Deep level transient spectrometry
High electron mobility transistor
Current mode
Numerical simulation
Reliability
Optimization
Damaging
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Summary:Traps are characterized in AlGaN–GaN HEMTs by means of DLTS techniques and the associated charge/discharge behavior is interpreted with the aid of numerical device simulations. Under specific bias conditions, buffer traps can produce “false” surface-trap signals, i.e. the same type of current-mode DLTS (I-DLTS) or ICTS signals that are generally attributed to surface traps. Clarifying this aspect is important for both reliability testing and device optimization, as it can lead to erroneous identification of the degradation mechanism, thus resulting in wrong correction actions on the technological process.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2007.07.005