Single Event Effects in Power MOSFETs Due to Atmospheric and Thermal Neutrons

• Published in: IEEE transactions on nuclear science Vol. 58; no. 6; pp. 2687 - 2694
• Main Authors: Hands, A., Morris, P., Ryden, K., Dyer, C., Truscott, P., Chugg, A., Parker, S.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2011; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Atmospherics; Devices; Electric potential; Fuel consumption; High voltages; Leakage current; Logic gates; MOSFETs; neutron beams; Neutrons; Nuclear power generation; Radiation effects; single event burnout; single event effects; Single event upset; Thermal neutrons

Eight commercially available n-channel power MOSFETs were exposed to high energy spallation neutrons and thermal neutrons in separate experiments. Single event burnout (SEB) was observed in several of the devices in both environments. Measurements of SEB at derated drain-source voltages show very st...