Single Event Effects in Power MOSFETs Due to Atmospheric and Thermal Neutrons

Eight commercially available n-channel power MOSFETs were exposed to high energy spallation neutrons and thermal neutrons in separate experiments. Single event burnout (SEB) was observed in several of the devices in both environments. Measurements of SEB at derated drain-source voltages show very st...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 58; no. 6; pp. 2687 - 2694
Main Authors Hands, A., Morris, P., Ryden, K., Dyer, C., Truscott, P., Chugg, A., Parker, S.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2011
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Atmospherics
Devices
Electric potential
Fuel consumption
High voltages
Leakage current
Logic gates
MOSFETs
neutron beams
Neutrons
Nuclear power generation
Radiation effects
single event burnout
single event effects
Single event upset
Thermal neutrons
Online AccessGet full text

Cover

More Information
Summary:Eight commercially available n-channel power MOSFETs were exposed to high energy spallation neutrons and thermal neutrons in separate experiments. Single event burnout (SEB) was observed in several of the devices in both environments. Measurements of SEB at derated drain-source voltages show very strong reductions in burnout cross-sections, but suggest that current recommendations for safe operation of devices may need updating for high voltage devices. In one device a different failure mode was observed, with subsequent investigations suggesting that single event gate rupture (SEGR) was responsible. This first observation of SEGR in accelerated neutron testing of power MOSFETs represents a new consideration for designers of high voltage control systems.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2011.2168540