Submicrometer optical lithography using a double-layer resist by a single development technology

Submicrometer photoresist patterns having 3:1 vertical/ horizontal aspect ratios have been fabricated on a nonplanar wafer surface with steps of up to 1 µm by a new technology which can use a conventional LSI photolithographic system. The new technology is simply composed of forming the first layer...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 31; no. 12; pp. 1861 - 1866
Main Authors Tsuji, K., Sasago, M., Kugimiya, K.
Format Journal Article
LanguageEnglish
Published IEEE 01.12.1984
Subjects
Microwave circuits
Microwave integrated circuits
Microwave transistors
Resists
Surface treatment
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Summary:Submicrometer photoresist patterns having 3:1 vertical/ horizontal aspect ratios have been fabricated on a nonplanar wafer surface with steps of up to 1 µm by a new technology which can use a conventional LSI photolithographic system. The new technology is simply composed of forming the first layer with a blanket exposure including special surface treatment and the second layer, all in the same spinner, with the UV mask exposure, and patterning by a single development step. Although some ambiguities about the mechanism of the stable double-layer formation remain, the technology is proved to have high throughput, stable reproducibility, and fine patterning ability even on a reflective metal such as aluminum.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1984.21802