An Embeddable SOI Radiation Sensor

• Published in: IEEE transactions on nuclear science Vol. 56; no. 6; pp. 3372 - 3380
• Main Authors: Shaneyfelt, M.R., Hill, T.A., Gurrieri, T.M., Schwank, J.R., Flores, R.S., Dodd, P.E., Dalton, S.M., Robinson, A.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.12.2009; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Annealing; Charge; Circuits; CMOS technology; Construction; Dosage; Dosimeters; Dosimetry; Electric circuits; Ionizing radiation sensors; Irradiation; Leakage current; Oxides; Pins; RadFETs; radiation effects; Radiation monitoring; Sensor arrays; Sensor phenomena and characterization; Silicon on insulator technology; silicon-on-insulator; Studies; total ionizing dose
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2009.2033474

The feasibility of developing an embeddable silicon-on-insulator (SOI) buried oxide MOS dosimeter (RadFET) has been demonstrated. This dosimeter takes advantage of the inherent properties for radiation-induced charge buildup in the buried oxides of commercial SOI wafers. Discrete SOI buried oxide RadFETs and fully-functional read-out circuitry have been fabricated in Sandia's CMOS7 radiation-hardened SOI technology. Discrete RadFETs have been irradiated under various radiation conditions and subjected to post-irradiation anneals. Data show only a small dose rate dependence and less than a 10% annealing or fade of the dosimeters output characteristics when irradiated with all pins shorted. These results show less fade than dual-dielectric RadFETs irradiated under the same bias conditions and support the use of SOI buried oxide RadFETs for low dose rate applications. Read-out circuitry has also been designed and fabricated to monitor changes in the ¿off¿ state leakage current induced by radiation-induced charge buildup in the buried oxide dosimeter. The analog-to-digital output from the read-out circuit changes linearly with the ¿off¿ state leakage current. Preliminary radiation characterizations of the read-out circuitry show no spurious effects of radiation-induced charge buildup in the read-out circuitry on the dosimeter output. These results indicate it is feasible to develop an embeddable SOI buried oxide RadFET as an attractive choice for many low power, low dose rate applications requiring real-time knowledge of total ionizing dose radiation levels.