Mechanism of amorphous silica film formation from tetraethoxysilane in atomic oxygen-induced chemical vapor deposition

Saved in:
Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 145; no. 8; pp. 2866 - 2876
Main Authors WROBEL, A. M, WALKIEWICZ-PIETRZYKOWSKA, A, WICKRAMANAYAKA, S, HATANAKA, Y
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.08.1998
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Thin films
CVD
Inorganic compounds
Semiconductor materials
Silicon oxides
Organic siloxane
Binary compounds
Amorphous state
Experimental study
Oxygen Atoms
Formation mechanism
Precursor
Online AccessGet full text

Cover

More Information
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1838727