Evaluation of passive film growth models with the electrochemical quartz crystal microbalance on PVD deposited Cr

With the electrochemical quartz crystal microbalance, it is possible to obtain time-resolved in situ estimates of thickness changes of passive films. Thickness changes recorded for physical vapor deposited pure Cr during potential scans in the passive region in acidic media were compared to two diff...

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 147; no. 11; pp. 4093 - 4102
Main Authors OLSSON, C.-O. A, HAMM, D, LANDOLT, D
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.11.2000
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Summary:With the electrochemical quartz crystal microbalance, it is possible to obtain time-resolved in situ estimates of thickness changes of passive films. Thickness changes recorded for physical vapor deposited pure Cr during potential scans in the passive region in acidic media were compared to two different theories for passive film growth: the potential change is governing the growth rate through a reaction at either of the oxide film interfaces (interface model), or it controls the ion conduction current through the film (high field model). The two models proved equally successful in predicting the film growth curves for varying potential-step amplitudes and sweep rates. However, for experiments with different initial passive film thicknesses, the interface model was more successful in predicting film growth.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1394025