Growth and Characterization of CZT Crystals by the Vertical Bridgman Method for X-Ray Detector Applications

• Published in: IEEE transactions on nuclear science Vol. 58; no. 5; pp. 2352 - 2356
• Main Authors: Zappettini, A., Marchini, L., Mingzheng Zha, Benassi, G., Zambelli, N., Calestani, D., Zanotti, L., Gombia, E., Mosca, R., Zanichelli, M., Pavesi, M., Auricchio, N., Caroli, E.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.10.2011; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Boron; Boron oxide; Boron oxide vertical Bridgman; Bridgman method; Cadmium zinc tellurides; CdZnTe; Conductivity; Crystal growth; Crystals; Detectors; Energy resolution; Impurities; mobility-lifetime product; Spectroscopy; vertical Bridgman; X-ray detectors
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2011.2163643

CdZnTe crystals were grown by the vertical Bridgman method in closed quartz ampoules. The crystalline quality and the impurity content of these crystals were studied. Several X-ray detectors were cut out of these crystals. The resistivity, emission spectra, μτ product, and spectroscopic characteristics of these detectors were extensively measured and compared with the characteristics of detectors obtained from CdZnTe crystals grown by the boron oxide encapsulated vertical Bridgman technique. The detectors prepared from crystals grown without boron oxide show good μτ value, spectroscopic resolution, and higher reproducibility. The influence of growth method on impurity content and on detector response was discussed.