Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays

We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the re...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 56; no. 4; pp. 2205 - 2212
Main Authors Griffoni, A., Silvestri, M., Gerardin, S., Meneghesso, G., Paccagnella, A., Kaczer, B., de Potter de ten Broeck, M., Verbeeck, R., Nackaerts, A.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.08.2009
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
CMOS
CMOS technology
Devices
dose enhancement
Electron beams
Electron emission
Integrated circuit interconnections
MOSFETs
Neutrons
Particle beams
Performance evaluation
Proximity
radiation hardness
Semiconductor devices
Spacers
Testing
total dose
Transistors
X-rays
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Summary:We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2009.2012860