Time evolution of boron-doped polycrystalline silicon gate resistance

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 146; no. 2; pp. 755 - 757
Main Authors TASHIRO, H, SUZUKI, K, AOYAMA, T, MIYASHITA, T
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.02.1999
Subjects
Applied sciences
Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Materials science
Microelectronic fabrication (materials and surfaces technology)
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Treatment of materials and its effects on microstructure and properties
Resistance
Boron
Annealing
Sheet resistivity
Polycrystal
Silicon
Experimental study
Low temperature
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.1391676