Memory Reliability Model for Accumulated and Clustered Soft Errors

The soft error rates of memories are increased by high-energy particles as technology shrinks. Single-error correction codes (SEC), scrubbing techniques, and interleaving distance (ID) schemes are the most common approaches for protecting memories from soft errors. It is essential to employ analytic...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 58; no. 5; pp. 2483 - 2492
Main Authors Soonyoung Lee, Sanghyeon Baeg, Reviriego, P.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.10.2011
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Clustering
Compound-poisson
Error correction codes
Estimates
Failure
interleaving distance
Mathematical analysis
MBU
MCU
Memory architecture
Microprocessors
Probability density function
Random access memory
Reliability
SBU
Scrubbing
scrubbing interval
soft error
Soft errors
Static random access memory
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Summary:The soft error rates of memories are increased by high-energy particles as technology shrinks. Single-error correction codes (SEC), scrubbing techniques, and interleaving distance (ID) schemes are the most common approaches for protecting memories from soft errors. It is essential to employ analytical models to guide the selection of the interleaving distance; relying on rough estimates may lead to unreasonable design choices. The analytical model proposed in this paper includes the row clustering effects of the accumulated upsets, and was able to estimate the failure probability with a difference of only 0.015% compared to the test data for a 45 nm static random access memory (SRAM) design.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2011.2164555