New threshold voltage definition for undoped symmetrical DG MOSFET

► A new threshold definition is proposed for symmetrical undoped DG MOSFET. ► V T model with only two geometry-independent fitting parameters is presented. ► Good agreement with numerical simulations is achieved (error less than 10%). A new threshold definition is proposed for symmetrical undoped do...

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 52; no. 1; pp. 294 - 295
Main Authors Sałek, Paweł, Łukasiak, Lidia, Jakubowski, Andrzej
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier Ltd 2012
Elsevier
Subjects
Applied sciences
Computer simulation
Devices
Electronics
Exact sciences and technology
Fittings
Gates
Mathematical models
Metal oxide semiconductors
MOSFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Transistors
Voltage threshold
MOSFET
Numerical simulation
Dual gate transistor
Comparative study
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Summary:► A new threshold definition is proposed for symmetrical undoped DG MOSFET. ► V T model with only two geometry-independent fitting parameters is presented. ► Good agreement with numerical simulations is achieved (error less than 10%). A new threshold definition is proposed for symmetrical undoped double gate MOS (DGMOS). Threshold voltage is calculated using the potential model described in [1] with only two fitting parameters, the values of which do not depend on device geometry. Comparison with the results of numerical simulations and other models of V T is presented and good accuracy of the new model is demonstrated.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2011.07.083