Cleaning of Si and GaAs crystal surfaces by ion bombardment in the 50-1500 eV range: influence of bombarding energy and sample temperature on damage and incorporation

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 131; no. 4; pp. 905 - 914
Main Authors RABINZOHN, P, GAUTHERIN, G, AGIUS, B, COHEN, C
Format Conference Proceeding Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.04.1984
Subjects
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Ion radiation effects
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids; crystallography
Surface cleaning
Non metal
Ion implantation
Temperature
Channeling
Amorphization
Ions
Experimental study
Single crystal
Surface treatment
Inorganic compound
Gallium Arsenides
Rutherford backscattering
Neon Atomic ions
Argon Atomic ions
Energy
Irradiation
Silicon
Xenon Atomic ions
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More Information
ISSN:0013-4651
1945-7111
DOI:10.1149/1.2115726