Simulation model for electron irradiated IGZO thin film transistors

An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O（IGZO） thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage...

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Bibliographic Details
Published inJournal of semiconductors Vol. 39; no. 2; pp. 17 - 21
Main Authors Dayananda, G K, Shantharama Rai, C, Jayarama, A, Jae Kim, Hyun
Format Journal Article
LanguageEnglish
Published Chinese Institute of Electronics 01.02.2018
Subjects
electron irradiation
IGZO
simulation model
TFT
模拟模型;晶体管;电子;电影;数学模型分析;隧道长度;管电流;开发
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Summary:An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O（IGZO） thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.
Bibliography:11-5781/TN
simulation model IGZO TFT electron irradiation
An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O（IGZO） thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model.
ISSN:1674-4926
DOI:10.1088/1674-4926/39/2/022002