Flash memory electromagnetic compatibility

• Published in: IEEE transactions on device and materials reliability Vol. 6; no. 2; pp. 266 - 276
• Main Authors: Fogle, A.D., Don Darling, Blish, R.C., Daszko, G.
• Format: Magazine Article
• Language: English
• Published: New York IEEE 01.06.2006; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Access time; Density; Devices; Electromagnetic analysis; Electromagnetic compatibility; electromagnetic interference; Electromagnetic measurements; Electromagnetism; Electronics industry; Extraterrestrial measurements; Fittings; Flash memory; Flash memory (computers); Integrated circuit noise; MOS memory integrated circuits; Noise; Noise measurement; Radio frequency; Sea measurements; Slew rate; Space technology
• ISSN: 1530-4388; 1558-2574
• DOI: 10.1109/TDMR.2006.876573

This paper analyzes the radiated electromagnetic compatibility (EMC) behavior of AMD/Spansion Flash memory integrated circuits. Using The Engineering Society For Advanced Mobility Land Sea Air and Space (SAE) J1752/3 method, the peak RF noise (EMC with respect to radiated emissions) was measured for various technologies and product features, determining statistically valid sensitivity factors for several independent variables. The findings show that radiated emissions vary based on technology shrink, memory size, access time, and package. The authors are able to predict a device's radiated EMI to a precision of ~4dBmuV (one sigma) and with good accuracy by fitting noise performance as a function of a density parameter (a combination of technology critical dimensions and number of bits) and the logarithm of the access time. It was found that devices built on current technologies generate much less noise than their predecessors primarily due to slew rate control to permit simultaneous read/write operations, output buffer driver design improvements, and smaller radiating antennae