Annealing of boron-implanted corrosion resistant copper films

Ion implantation can be used effectively to passivate copper. The effect of B ion implantation on the oxidization rate of copper is studied as a function of B energy and dose. The increase of sheet resistance associated with ion implantation damage and with the incorporation of B is studied. It is f...

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Bibliographic Details
Published inJournal of applied physics Vol. 74; no. 2; pp. 1331 - 1334
Main Authors DING, P. J, LANFORD, W. A, HYMES, S, MURARKA, S. P
Format Journal Article
LanguageEnglish
Published Woodbury, NY American Institute of Physics 15.07.1993
Subjects
Condensed matter: structure, mechanical and thermal properties
Defects and impurities: doping, implantation, distribution, concentration, etc
Diffusion; interface formation
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Thin films
Corrosion resistance
Ion implantation
RBS
Annealing
Transition elements
Sheet resistance
Boron additions
Copper
Experimental study
Passivation
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Summary:Ion implantation can be used effectively to passivate copper. The effect of B ion implantation on the oxidization rate of copper is studied as a function of B energy and dose. The increase of sheet resistance associated with ion implantation damage and with the incorporation of B is studied. It is found that a post-implantation inert gas annealing (at 400 °C for 20 min) removes the increase in sheet resistance caused by implant damage while preserving the passivation effects of the B implant.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.354913