Application of AlGaInP with Sb Incorporation in Lattice-Matched 5-Junction Tandem Solar Cells

It is well known that conventional CalnP/GMnAs/Ce three-junction (3J) solar cells are difficult to continue to ascend when the effieiencies reach 32% and 42% under AMO and AM1.5D concentrated, respectively. In AlCaInP/AiGMnAs/CalnAs/CalnNAs/Ce five-junction (5,/) solar cells, the performance of the...

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Published inChinese physics letters Vol. 34; no. 2; pp. 126 - 130
Main Author 张杨 王青 张小宾 彭娜 刘振奇 陈丙振 黄珊珊 王智勇
Format Journal Article
LanguageEnglish
Published Chinese Physical Society and IOP Publishing Ltd 01.02.2017
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/34/2/028802

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Summary:It is well known that conventional CalnP/GMnAs/Ce three-junction (3J) solar cells are difficult to continue to ascend when the effieiencies reach 32% and 42% under AMO and AM1.5D concentrated, respectively. In AlCaInP/AiGMnAs/CalnAs/CalnNAs/Ce five-junction (5,/) solar cells, the performance of the AlGaInP, Al- CalnAs and CalnNAs sub cell is the key factor for conversion efficiency of the 5J solar cell. We investigate the AlCaInP/AlCaInAs/Ge 3J solar cell. By incorporating surfactant trimthylantimony into the AlGaInP material, the crystal quality of AICalnP is improved and the spectrum absorption range of AICalnAs is extended. The current density of each sub cell exceeds ll.3mA/cm2 as is desired. Then we apply this 3J structure to grow the lattice-matched 5J solar ceil and obtain the short circuit current of 134.96 mA, open circuit voltage of 4399.6 m V, fill factor of 81.7% and conversion efficiency of 29.87%.
Bibliography:Yang Zhang1, Qing Wang1, Xiao-Bin Zhang2, Na Peng2, Zhen-Qi Liu2, Bing-Zhen Chen2, Shan-Shan Huang2, Zhi-Yong Wang(1. Institute of Laser Engineering, Beijing University of Technology, Beijing 100022; 2. Redsolar New Energy Technology Co. Ltd., Zhongshan 528437)
11-1959/O4
It is well known that conventional CalnP/GMnAs/Ce three-junction (3J) solar cells are difficult to continue to ascend when the effieiencies reach 32% and 42% under AMO and AM1.5D concentrated, respectively. In AlCaInP/AiGMnAs/CalnAs/CalnNAs/Ce five-junction (5,/) solar cells, the performance of the AlGaInP, Al- CalnAs and CalnNAs sub cell is the key factor for conversion efficiency of the 5J solar cell. We investigate the AlCaInP/AlCaInAs/Ge 3J solar cell. By incorporating surfactant trimthylantimony into the AlGaInP material, the crystal quality of AICalnP is improved and the spectrum absorption range of AICalnAs is extended. The current density of each sub cell exceeds ll.3mA/cm2 as is desired. Then we apply this 3J structure to grow the lattice-matched 5J solar ceil and obtain the short circuit current of 134.96 mA, open circuit voltage of 4399.6 m V, fill factor of 81.7% and conversion efficiency of 29.87%.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/34/2/028802