On the role of chlorine in selective silicon epitaxy by chemical vapor deposition

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 143; no. 10; pp. 3290 - 3296
Main Authors VIOLETTE, K. E, O'NEIL, P. A, ÖZTÜRK, M. C, CHRISTENSEN, K, MAHER, D. M
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.10.1996
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
CVD
Rapid thermal annealing
Epitaxial layers
Selective growth
Semiconductor materials
Chlorine molecules
Nonmetals
Controlled atmospheres
Silicon
Crystal growth from vapors
Thermal etching
Experimental study
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.1837200