Bowing Profile Induced by Ion Implant Damage during Silicon Gate Etching

Saved in:
Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 41; no. Part 1, No. 2A; pp. 930 - 935
Main Authors Park, Kun Joo, Lee, Won Gyu
Format Journal Article
LanguageEnglish
Published 01.02.2002
Online AccessGet full text

Cover

More Information
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.930