A Precise Current Detection Method Using a Single Shunt and FET Rds(on) of a Low-Voltage Three-Phase Inverter

In this study, a low-voltage three-phase inverter was used alongside a shunt resistor to measure the current. However, it is known that this type of inverter and shunt resistor system has a region where the measurement of current is impossible due to structural limitations. As a result, many studies...

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Bibliographic Details
Published inElectronics (Basel) Vol. 11; no. 1; p. 9
Main Authors Hwang, Jae-Yeob, Park, Ji-Hwan, Choi, Ji-Ho, Uhm, Jun-Ik, Lee, Geun-Ho, Lim, Hee-Sun
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.01.2022
Subjects
Algorithms
Control stability
Electric potential
Fault diagnosis
Harmonic distortion
Inverters
Kalman filters
MOSFETs
Noise
Sensors
Voltage
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Summary:In this study, a low-voltage three-phase inverter was used alongside a shunt resistor to measure the current. However, it is known that this type of inverter and shunt resistor system has a region where the measurement of current is impossible due to structural limitations. As a result, many studies have focused on this region through the use of additional algorithms. Most studies measured current by forcibly adjusting the PWM duty in order to measure the current at the region where it could not be sensed. However, unfortunately, the total harmonic distortion (THD) increases in the current due to PWM adjustment. This causes an increase in torque ripple and inverter control instability. Therefore, in this paper, current was measured using the Rds(on) value between the drain source resistor when MOSFET was turned on and the Kalman filter in a low-voltage three-phase inverter with a single shunt. Additionally, the value was verified via comparison with the values achieved when a Hall-type current sensor and single shunt were used. As a result, this study confirmed that the inverter with a single shunt performs the same as a Hall-type sensor at the region where current cannot be detected.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics11010009