8 MeV electron beam induced modifications in the thermal, structural and electrical properties of nanophase CeO2 for potential electronics applications

• Published in: Radiation physics and chemistry (Oxford, England : 1993) Vol. 147; pp. 64 - 69
• Main Authors: Babitha, K.K., Sreedevi, A., Priyanka, K.P., Ganesh, S., Varghese, Thomas
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2018
• Subjects: CeO2 nanoparticles; Electrical studies; Electron beam irradiation; Structural studies; Structural studies; Electrical studies; Electron beam irradiation; CeO2 nanoparticles
• ISSN: 0969-806X; 1879-0895
• DOI: 10.1016/j.radphyschem.2018.02.008

The effect of 8 MeV electron beam irradiation on the thermal, structural and electrical properties of CeO2 nanoparticles synthesized by chemical precipitation route was investigated. The dose dependent effect of electron irradiation was studied using various characterization techniques such as, thermogravimetric and differential thermal analyses, X-ray diffraction, Fourier transformed infrared spectroscopy and impedance spectroscopy. Systematic investigation based on the results of structural studies confirm that electron beam irradiation induces defects and particle size variation on CeO2 nanoparticles, which in turn results improvements in AC conductivity, dielectric constant and loss tangent. Structural modifications and high value of dielectric constant for CeO2 nanoparticles due to electron beam irradiation make it as a promising material for the fabrication of gate dielectric in metal oxide semiconductor devices. •First report for the dose dependent effect of electron irradiation on the electrical properties of CeO2 nanoparticles.•Electron irradiation of suitable dose can result enhanced structural and electrical properties of CeO2 nanoparticles.•Electron irradiated CeO2 samples with high dielectric constant can be used as gate dielectric material for MOS devices.