APA (7th ed.) Citation

Ellis, D. F., Zhou, Y., Salcedo, J. A., Hajjar, J., & Liou, J. J. (2010). Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses. IEEE transactions on electron devices, 57(9), 2296-2305. https://doi.org/10.1109/TED.2010.2053864

Chicago Style (17th ed.) Citation

Ellis, D F., Yuanzhong Zhou, J A. Salcedo, J. Hajjar, and J J. Liou. "Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses." IEEE Transactions on Electron Devices 57, no. 9 (2010): 2296-2305. https://doi.org/10.1109/TED.2010.2053864.

MLA (9th ed.) Citation

Ellis, D F., et al. "Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses." IEEE Transactions on Electron Devices, vol. 57, no. 9, 2010, pp. 2296-2305, https://doi.org/10.1109/TED.2010.2053864.