Band offsets for the epitaxial TiO2/SrTiO3/Si(001) system

• Published in: Applied physics letters Vol. 83; no. 18; pp. 3734 - 3736
• Main Authors: Tuan, A. C., Kaspar, T. C., Droubay, T., Rogers, J. W., Chambers, S. A.
• Format: Journal Article
• Language: English
• Published: United States 03.11.2003
• Subjects: ENERGY GAP; Environmental Molecular Sciences Laboratory; EPITAXY; INTERFACES; MATERIALS SCIENCE; SILICON; STRONTIUM OXIDES; TITANIUM OXIDES

We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2 (anatase)/SrTiO3/Si(001) system. The valence band offsets are −2.1±0.1 eV and +0.2±0.1 eV at the SrTiO3/Si and TiO2/SrTiO3 heterojunctions, r...