Band offsets for the epitaxial TiO2/SrTiO3/Si(001) system

We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2 (anatase)/SrTiO3/Si(001) system. The valence band offsets are −2.1±0.1 eV and +0.2±0.1 eV at the SrTiO3/Si and TiO2/SrTiO3 heterojunctions, r...

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Bibliographic Details
Published inApplied physics letters Vol. 83; no. 18; pp. 3734 - 3736
Main Authors Tuan, A. C., Kaspar, T. C., Droubay, T., Rogers, J. W., Chambers, S. A.
Format Journal Article
LanguageEnglish
Published United States 03.11.2003
Subjects
ENERGY GAP
Environmental Molecular Sciences Laboratory
EPITAXY
INTERFACES
MATERIALS SCIENCE
SILICON
STRONTIUM OXIDES
TITANIUM OXIDES
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Summary:We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2 (anatase)/SrTiO3/Si(001) system. The valence band offsets are −2.1±0.1 eV and +0.2±0.1 eV at the SrTiO3/Si and TiO2/SrTiO3 heterojunctions, respectively. Assuming bulk band gaps for the SrTiO3 and TiO2 epitaxial films, the associated conduction band offsets are +0.1±0.1 eV and +0.1±0.1 eV. Si at the interface is in a flatband state, indicating a very low density of electronic states. These results suggest that spin-polarized electron injection from ferromagnetic Co-doped TiO2 anatase into Si should be facile.
Bibliography:PNNL-SA-39168
USDOE
AC05-76RL01830
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1625113