Band offsets for the epitaxial TiO2/SrTiO3/Si(001) system
We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2 (anatase)/SrTiO3/Si(001) system. The valence band offsets are −2.1±0.1 eV and +0.2±0.1 eV at the SrTiO3/Si and TiO2/SrTiO3 heterojunctions, r...
Saved in:
| Published in | Applied physics letters Vol. 83; no. 18; pp. 3734 - 3736 |
|---|---|
| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
United States
03.11.2003
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2 (anatase)/SrTiO3/Si(001) system. The valence band offsets are −2.1±0.1 eV and +0.2±0.1 eV at the SrTiO3/Si and TiO2/SrTiO3 heterojunctions, respectively. Assuming bulk band gaps for the SrTiO3 and TiO2 epitaxial films, the associated conduction band offsets are +0.1±0.1 eV and +0.1±0.1 eV. Si at the interface is in a flatband state, indicating a very low density of electronic states. These results suggest that spin-polarized electron injection from ferromagnetic Co-doped TiO2 anatase into Si should be facile. |
|---|---|
| AbstractList | We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2 (anatase)/SrTiO3/Si(001) system. The valence band offsets are −2.1±0.1 eV and +0.2±0.1 eV at the SrTiO3/Si and TiO2/SrTiO3 heterojunctions, respectively. Assuming bulk band gaps for the SrTiO3 and TiO2 epitaxial films, the associated conduction band offsets are +0.1±0.1 eV and +0.1±0.1 eV. Si at the interface is in a flatband state, indicating a very low density of electronic states. These results suggest that spin-polarized electron injection from ferromagnetic Co-doped TiO2 anatase into Si should be facile. We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO₂ (anatase)/ SrTiO₃/Si(001) system. The valence band offsets are -2.1 +/- 0.1 eV and +0.2 +/- 0.1 eV at the SrTiO₃/Si and TiO₂/SrTiO₃ heterojunctions, respectively. Assuming bulk band gaps for the SrTiO₃ and TiO₂ epitaxial films, the associated conduction band offsets are +0.1 +/- 0.1 eV and +0.1 +/- 0.1 eV. Si at the interface is in a flat-band state, indicating a very low density of electronic states. These results suggest that spin polarized electron injection from ferromagnetic Co-doped TiO₂ anatase into Si should be facile. PACS numbers: 79.60.Jv, 72.25.Dc |
| Author | Rogers, J. W. Chambers, S. A. Droubay, T. Tuan, A. C. Kaspar, T. C. |
| Author_xml | – sequence: 1 givenname: A. C. surname: Tuan fullname: Tuan, A. C. – sequence: 2 givenname: T. C. surname: Kaspar fullname: Kaspar, T. C. – sequence: 3 givenname: T. surname: Droubay fullname: Droubay, T. – sequence: 4 givenname: J. W. surname: Rogers fullname: Rogers, J. W. – sequence: 5 givenname: S. A. surname: Chambers fullname: Chambers, S. A. |
| BackLink | https://www.osti.gov/biblio/15006820$$D View this record in Osti.gov |
| BookMark | eNptkD9vwjAUxK2KSgXaod8gUpcyhLxnJ7Eztqj_JCQG6GwZ51m4ghjFHsq3byqYqk6nO_3uhpuwURc6YuweYY5QiwLnWPMKUVyxMYKUuUBUIzYGAJHXTYU3bBLj12ArLsSYNc-ma7PgXKQUMxf6LO0oo6NP5tubfbbxK16s-0FEsfaPADjL4ikmOtyya2f2ke4uOmWfry-bxXu-XL19LJ6WuRUcU06N23Li0EJVqdZCLbkqy7IVjktlhQTDgYhzxVE1pbTlEJZy6xS5BhpAMWUP590Qk9fR-kR2Z0PXkU0aK4BacRio2ZmyfYixJ6ePvT-Y_qQR9O8zGvXlmYEt_rDDqEk-dKk3fv9P4wcAmWI4 |
| CitedBy_id | crossref_primary_10_1063_1_3600340 crossref_primary_10_1186_s11671_018_2825_6 crossref_primary_10_1007_s00269_020_01120_8 crossref_primary_10_1002_adma_200904306 crossref_primary_10_1088_1361_648X_ac1620 crossref_primary_10_1016_j_susc_2009_01_023 crossref_primary_10_1002_chem_202101764 crossref_primary_10_1063_1_2128477 crossref_primary_10_1116_1_1868672 crossref_primary_10_1016_j_surfrep_2011_01_001 crossref_primary_10_1109_LED_2013_2282154 crossref_primary_10_1007_s10853_012_6392_4 crossref_primary_10_1039_D1CY00451D crossref_primary_10_1063_1_4883865 crossref_primary_10_1063_1_2709642 crossref_primary_10_1063_1_2206710 crossref_primary_10_1063_1_1644055 crossref_primary_10_1063_1_3275051 crossref_primary_10_1063_1_1819988 crossref_primary_10_1116_1_4816951 crossref_primary_10_1063_1_1776313 crossref_primary_10_1063_5_0236670 crossref_primary_10_1063_1_4913464 crossref_primary_10_1063_1_4913662 crossref_primary_10_1063_1_4963289 crossref_primary_10_1007_s00339_011_6535_5 crossref_primary_10_1088_0022_3727_48_48_485305 crossref_primary_10_1002_admi_201801428 crossref_primary_10_1063_1_1940739 crossref_primary_10_1063_1_2194314 crossref_primary_10_1063_1_1891285 crossref_primary_10_1016_j_apsusc_2016_12_094 crossref_primary_10_1002_admi_201500193 crossref_primary_10_1063_1_2181282 crossref_primary_10_1116_1_4719541 crossref_primary_10_3390_ma17122882 crossref_primary_10_1116_1_1768525 crossref_primary_10_1007_s00339_014_8221_x crossref_primary_10_1063_1_2199451 crossref_primary_10_1109_LED_2012_2189193 crossref_primary_10_1063_5_0007138 crossref_primary_10_1021_acsami_0c15912 crossref_primary_10_1007_s00339_013_7870_5 crossref_primary_10_1002_adma_200901867 crossref_primary_10_1063_1_2170140 crossref_primary_10_3390_surfaces1010007 crossref_primary_10_1063_1_4757281 crossref_primary_10_1063_1_1839287 crossref_primary_10_1063_1_3672218 crossref_primary_10_1007_s10854_018_0161_3 crossref_primary_10_1111_jace_14074 crossref_primary_10_1002_pssb_200404942 crossref_primary_10_1016_j_susc_2004_02_021 crossref_primary_10_1063_1_1868854 crossref_primary_10_1063_1_3673905 |
| Cites_doi | 10.1557/mrs2002.71 10.1063/1.126023 10.1063/1.102747 10.1103/PhysRevLett.81.3014 10.1103/PhysRevLett.44.1620 10.1016/S0040-6090(02)00709-5 10.1103/PhysRevB.28.1965 10.1126/science.1065389 10.1103/PhysRevB.67.100401 10.1063/1.1310209 10.1063/1.1556173 10.1063/1.1420434 10.1116/1.1365132 10.1126/science.1056186 |
| ContentType | Journal Article |
| CorporateAuthor | Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL) |
| CorporateAuthor_xml | – name: Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL) |
| DBID | AAYXX CITATION OTOTI |
| DOI | 10.1063/1.1625113 |
| DatabaseName | CrossRef OSTI.GOV |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | CrossRef |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering Physics |
| EISSN | 1077-3118 |
| EndPage | 3736 |
| ExternalDocumentID | 15006820 10_1063_1_1625113 |
| GroupedDBID | -DZ -~X .DC 186 1UP 2-P 23M 4.4 53G 5GY 5VS 6J9 6TJ A9. AAAAW AABDS AAGWI AAGZG AAPUP AAYIH AAYJJ AAYXX ABFTF ABJGX ABJNI ABRJW ABZEH ACBEA ACBRY ACGFO ACGFS ACLYJ ACNCT ACZLF ADCTM ADMLS AEGXH AEJMO AENEX AETEA AFATG AFHCQ AGKCL AGLKD AGMXG AGTJO AHSDT AIAGR AJJCW AJQPL ALEPV ALMA_UNASSIGNED_HOLDINGS AQWKA ATXIE AWQPM BDMKI BPZLN CITATION CS3 D0L EBS EJD F.2 F5P FDOHQ FFFMQ HAM M6X M71 M73 MVM N9A NEJ NPSNA O-B P2P RIP RNS ROL RQS SJN TAE TN5 UPT UQL VOH WH7 XJE YZZ ~02 0ZJ 6XO AAEUA ABPTK AGIHO ESX OTOTI UCJ UE8 XFK |
| ID | FETCH-LOGICAL-c321t-e9fb2e20d0558dc06728444d3f278c370a20ee228218947c48c347bf8ef909013 |
| ISSN | 0003-6951 |
| IngestDate | Thu May 18 18:33:45 EDT 2023 Thu Apr 24 23:14:57 EDT 2025 Tue Jul 01 01:04:31 EDT 2025 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 18 |
| Language | English |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c321t-e9fb2e20d0558dc06728444d3f278c370a20ee228218947c48c347bf8ef909013 |
| Notes | PNNL-SA-39168 USDOE AC05-76RL01830 |
| PageCount | 3 |
| ParticipantIDs | osti_scitechconnect_15006820 crossref_primary_10_1063_1_1625113 crossref_citationtrail_10_1063_1_1625113 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2003-11-03 |
| PublicationDateYYYYMMDD | 2003-11-03 |
| PublicationDate_xml | – month: 11 year: 2003 text: 2003-11-03 day: 03 |
| PublicationDecade | 2000 |
| PublicationPlace | United States |
| PublicationPlace_xml | – name: United States |
| PublicationTitle | Applied physics letters |
| PublicationYear | 2003 |
| References | (2024020401422731400_r12) 1983; 28 (2024020401422731400_r7) 2002; 27 (2024020401422731400_r10) 2000; 76 (2024020401422731400_r14) 2000; 77 2024020401422731400_r8 (2024020401422731400_r2) 2001; 291 (2024020401422731400_r9) 1998; 81 (2024020401422731400_r1a) 2002 (2024020401422731400_r15) 2001; 19 (2024020401422731400_r4) 2002; 418 (2024020401422731400_r5) 2003; 82 (2024020401422731400_r6) 2003; 67 (2024020401422731400_r3) 2001; 79 (2024020401422731400_r13) 1990; 56 (2024020401422731400_r1) 2001; 294 (2024020401422731400_r11) 1980; 44 |
| References_xml | – volume: 27 start-page: 198 year: 2002 ident: 2024020401422731400_r7 publication-title: MRS Bull. doi: 10.1557/mrs2002.71 – volume: 76 start-page: 1324 year: 2000 ident: 2024020401422731400_r10 publication-title: Appl. Phys. Lett. doi: 10.1063/1.126023 – volume: 56 start-page: 569 year: 1990 ident: 2024020401422731400_r13 publication-title: Appl. Phys. Lett. doi: 10.1063/1.102747 – volume: 81 start-page: 3014 year: 1998 ident: 2024020401422731400_r9 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.81.3014 – volume: 44 start-page: 1620 year: 1980 ident: 2024020401422731400_r11 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.44.1620 – start-page: 67 volume-title: Sci. Am. year: 2002 ident: 2024020401422731400_r1a – volume: 418 start-page: 197 year: 2002 ident: 2024020401422731400_r4 publication-title: Thin Solid Films doi: 10.1016/S0040-6090(02)00709-5 – volume: 28 start-page: 1965 year: 1983 ident: 2024020401422731400_r12 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.28.1965 – volume: 294 start-page: 1488 year: 2001 ident: 2024020401422731400_r1 publication-title: Science doi: 10.1126/science.1065389 – volume: 67 start-page: 100401 year: 2003 ident: 2024020401422731400_r6 publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.67.100401 – volume: 77 start-page: 1662 year: 2000 ident: 2024020401422731400_r14 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1310209 – volume-title: MRS Bull. ident: 2024020401422731400_r8 – volume: 82 start-page: 1257 year: 2003 ident: 2024020401422731400_r5 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1556173 – volume: 79 start-page: 3467 year: 2001 ident: 2024020401422731400_r3 publication-title: Appl. Phys. Lett. doi: 10.1063/1.1420434 – volume: 19 start-page: 934 year: 2001 ident: 2024020401422731400_r15 publication-title: J. Vac. Sci. Technol. B doi: 10.1116/1.1365132 – volume: 291 start-page: 854 year: 2001 ident: 2024020401422731400_r2 publication-title: Science doi: 10.1126/science.1056186 |
| SSID | ssj0005233 |
| Score | 2.0069396 |
| Snippet | We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO2... We have used x-ray photoelectron spectroscopy with high energy resolution to determine band discontinuities at the two buried interfaces of the epitaxial TiO₂... |
| SourceID | osti crossref |
| SourceType | Open Access Repository Enrichment Source Index Database |
| StartPage | 3734 |
| SubjectTerms | ENERGY GAP Environmental Molecular Sciences Laboratory EPITAXY INTERFACES MATERIALS SCIENCE SILICON STRONTIUM OXIDES TITANIUM OXIDES |
| Title | Band offsets for the epitaxial TiO2/SrTiO3/Si(001) system |
| URI | https://www.osti.gov/biblio/15006820 |
| Volume | 83 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3db9MwELdKJyR4QDBA7AMUIR6GqqRJnDjOY7eBpokvqZ3YE1Fin9GkqUVtKm389burnTSFPgxe0uSUD9X3y-Xn8_lnxt7FCkGjpfIBf_ykBPBLXinfaMUjHZWAB1Rt8UWcXSTnl-llr_ejU7W0rKtA_d46r-R_vIo29CvNkv0Hz7Y3RQPuo39xix7G7b18fExZ75kxC6gXbb0g0DogN5QIn1x9Jd3T8Rx3SDhhjI-SK8383Ck4d6lpw0dtrmMxuF5N9Gkp92RpU6WjYHAStGG6xIBkfd41n85ny6q8tfb1kM5Ptx7beTD4HmykG_hq3h3fCKHcF7lTiQUbNcOMkp0ukLqwKnkXPrITJHnm8pfQHIqtwRzZE-UVgkhQP4ivv1jNKP0fH7K2vHA1sC54ERXu0gdsJ8ZuBMbBndHp50_jThEQ582aivSnGu0pwYftczcYS3-GkbfDQCZP2RPXdfBGFgfPWA-mu-xxR1Bylz38Zp33nOWEDc9hw0NseIgNr8WGR9gYWmQMx1dHiIr3nsXEC3bx8cPk5Mx3y2T4isdR7UNuqhjiUIdpKrWisXWZJInmJs6k4llYxiFAjH3rSOZJphI0JlllJJg8RDrIX7L-dDaFV8xTutSZFrEGIH1YJPcaRIpvcJUao8N8jx01TVEopyFPS5lcF381-R572576ywqnbDvpkNqzQLZHksWKartUXWAnJRRITffvc48D9miN00PWr-dLeI1Esa7eOG_fAVGcXec |
| linkProvider | EBSCOhost |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Band+offsets+for+the+epitaxial+TiO2%2FSrTiO3%2FSi%28001%29+system&rft.jtitle=Applied+physics+letters&rft.au=Tuan%2C+A.+C.&rft.au=Kaspar%2C+T.+C.&rft.au=Droubay%2C+T.&rft.au=Rogers%2C+J.+W.&rft.date=2003-11-03&rft.issn=0003-6951&rft.eissn=1077-3118&rft.volume=83&rft.issue=18&rft.spage=3734&rft.epage=3736&rft_id=info:doi/10.1063%2F1.1625113&rft.externalDBID=n%2Fa&rft.externalDocID=10_1063_1_1625113 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0003-6951&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0003-6951&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0003-6951&client=summon |